Maximum Continuous Drain Current:
2 A, 2.7 A
Transistor Material:
Si
Width:
3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Package Type:
MSOP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.5 nC @ 10 V, 7.8 nC @ 10 V
Channel Type:
N, P
Length:
3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.25 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.86mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
110 mΩ, 200 mΩ
