Infineon IRFB260NPBF N-channel MOSFET, 56 A, 200 V HEXFET, 3-Pin TO-220AB

Infineon

Product Information

Maximum Drain Source Voltage:
200 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
N
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
56 A
Transistor Material:
Silicon
Pin Count:
3
RoHs Compliant
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This is N-channel MOSFET 56 A 200 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRFB260NPBF. It has a maximum of 200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of to-220ab. It consists of 1 elements per chip. While 56 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.

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Datasheet - IRFB260NPBF(Technical Reference)

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