Infineon IRFP1405PBF N-channel MOSFET, 160 A, 55 V HEXFET, 3-Pin TO-247
Product Information
Maximum Continuous Drain Current:
160 A
Transistor Material:
Si
Width:
19.71mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
120 nC @ 10 V
Channel Type:
N
Length:
15.29mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
310 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
5.31mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
5.3 mΩ
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Yes. We ship IRFP1405PBF Internationally to many countries around the world.
This is N-channel MOSFET 160 A 55 V HEXFET 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IRFP1405PBF. While 160 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 19.71mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The package is a sort of to-247. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 120 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.29mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 310 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 5.31mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 5.3 mω maximum drain source resistance.
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