Infineon IRF1404LPBF N-channel MOSFET, 162 A, 40 V HEXFET, 3-Pin I2PAK
Product Information
Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
160 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.8 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Channel Type:
N
Minimum Gate Threshold Voltage:
2V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
4 mΩ
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
162 A
Transistor Material:
Si
Height:
10.54mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Checking for live stock
FAQs
Yes. You can also search IRF1404LPBF on website for other similar products.
We accept all major payment methods for all products including ET13874430. Please check your shopping cart at the time of order.
You can order Infineon brand products with IRF1404LPBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRF1404LPBF N-channel MOSFET, 162 A, 40 V HEXFET, 3-Pin I2PAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF1404LPBF N-channel MOSFET, 162 A, 40 V HEXFET, 3-Pin I2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13874430 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13874430.
Yes. We ship IRF1404LPBF Internationally to many countries around the world.
This is N-channel MOSFET 162 A 40 V HEXFET 3-Pin I2PAK manufactured by Infineon. The manufacturer part number is IRF1404LPBF. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 160 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 3.8 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product is available in [Cannel Type] channel. Whereas its minimum gate threshold voltage includes 2v. The product carries 4v of maximum gate threshold voltage. It provides up to 4 mω maximum drain source resistance. The package is a sort of i2pak (to-262). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 162 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 10.54mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
Reviews
Don’t hesitate to ask questions for better clarification.