Toshiba TK5A60W,S4VX(M N-channel MOSFET, 5.4 A, 600 V TK, 3-Pin TO-220SIS
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
10.5 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
30 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.7V
Height:
15mm
Width:
4.5mm
Length:
10mm
Maximum Drain Source Resistance:
900 mΩ
Package Type:
TO-220SIS
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
5.4 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba TK5A60W,S4VX(M N-channel MOSFET, 5.4 A, 600 V TK, 3-Pin TO-220SIS. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK5A60W,S4VX(M N-channel MOSFET, 5.4 A, 600 V TK, 3-Pin TO-220SIS.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13865009 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13865009.
Yes. We ship TK5A60W,S4VX(M Internationally to many countries around the world.
This is N-channel MOSFET 5.4 A 600 V TK 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK5A60W,S4VX(M. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 10.5 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 30 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.7v of maximum gate threshold voltage. In addition, the height is 15mm. Furthermore, the product is 4.5mm wide. Its accurate length is 10mm. It provides up to 900 mω maximum drain source resistance. The package is a sort of to-220sis. It consists of 1 elements per chip. While 5.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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