Toshiba TK5P60W,RVQ(S N-channel MOSFET, 5.4 A, 600 V TK, 3-Pin DPAK
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
10.5 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
60 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.7V
Height:
2.3mm
Width:
7.18mm
Length:
6.6mm
Maximum Drain Source Resistance:
900 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
5.4 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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You can order Toshiba brand products with TK5P60W,RVQ(S directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba TK5P60W,RVQ(S N-channel MOSFET, 5.4 A, 600 V TK, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK5P60W,RVQ(S N-channel MOSFET, 5.4 A, 600 V TK, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13865008 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13865008.
Yes. We ship TK5P60W,RVQ(S Internationally to many countries around the world.
This is N-channel MOSFET 5.4 A 600 V TK 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TK5P60W,RVQ(S. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 10.5 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 60 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.7v of maximum gate threshold voltage. In addition, the height is 2.3mm. Furthermore, the product is 7.18mm wide. Its accurate length is 6.6mm. It provides up to 900 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 5.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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