Diodes Inc DMN2014LHAB-7 Dual N-channel MOSFET, 9.3 A, 20 V, 7-Pin U-DFN2030
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
16 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.7 W
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.1V
Height:
0.6mm
Width:
2.05mm
Length:
3.05mm
Maximum Drain Source Resistance:
28 mΩ
Package Type:
U-DFN2030
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
9.3 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
Checking for live stock
FAQs
Yes. You can also search DMN2014LHAB-7 on website for other similar products.
We accept all major payment methods for all products including ET13856502. Please check your shopping cart at the time of order.
You can order DiodesZetex brand products with DMN2014LHAB-7 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Inc DMN2014LHAB-7 Dual N-channel MOSFET, 9.3 A, 20 V, 7-Pin U-DFN2030. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc DMN2014LHAB-7 Dual N-channel MOSFET, 9.3 A, 20 V, 7-Pin U-DFN2030.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13856502 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "DiodesZetex" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13856502.
Yes. We ship DMN2014LHAB-7 Internationally to many countries around the world.
This is Diodes Inc Dual N-channel MOSFET 9.3 A 20 V 7-Pin U-DFN2030 manufactured by DiodesZetex. The manufacturer part number is DMN2014LHAB-7. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 16 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.7 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 1.1v of maximum gate threshold voltage. In addition, the height is 0.6mm. Furthermore, the product is 2.05mm wide. Its accurate length is 3.05mm. It provides up to 28 mω maximum drain source resistance. The package is a sort of u-dfn2030. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 9.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.
Reviews
Don’t hesitate to ask questions for better clarification.