Diodes Inc DMN3070SSN-7 N-channel MOSFET, 5.1 A, 30 V, 3-Pin SOT-346

DMN3070SSN-7 Diodes Inc  N-channel MOSFET, 5.1 A, 30 V, 3-Pin SOT-346
DMN3070SSN-7
DiodesZetex

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
13.2 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W, 780 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.1V
Height:
1.3mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
50 mΩ
Package Type:
SOT-346
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
5.1 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 5.1 A 30 V 3-Pin SOT-346 manufactured by DiodesZetex. The manufacturer part number is DMN3070SSN-7. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 13.2 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.3 w, 780 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.1v of maximum gate threshold voltage. In addition, the height is 1.3mm. Furthermore, the product is 1.7mm wide. Its accurate length is 3.1mm. It provides up to 50 mω maximum drain source resistance. The package is a sort of sot-346. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 5.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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