Diodes Inc DMP21D0UFB4-7B P-channel MOSFET, 1.17 A, 20 V, 3-Pin X2-DFN1006
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.5 nC @ 8 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
990 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1.2V
Height:
0.35mm
Width:
0.65mm
Length:
1.05mm
Maximum Drain Source Resistance:
960 mΩ
Package Type:
X2-DFN1006
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.17 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is Diodes Inc P-channel MOSFET 1.17 A 20 V 3-Pin X2-DFN1006 manufactured by DiodesZetex. The manufacturer part number is DMP21D0UFB4-7B. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 1.5 nc @ 8 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 990 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1.2v of maximum gate threshold voltage. In addition, the height is 0.35mm. Furthermore, the product is 0.65mm wide. Its accurate length is 1.05mm. It provides up to 960 mω maximum drain source resistance. The package is a sort of x2-dfn1006. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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