Diodes Inc DMG3418L-7 N-channel MOSFET, 4 A, 30 V, 3-Pin SOT-23
Product Information
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.5 nC @ 4.5 V
Channel Type:
N
Length:
3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.4 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
150 mΩ
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Yes. We ship DMG3418L-7 Internationally to many countries around the world.
This is Diodes Inc N-channel MOSFET 4 A 30 V 3-Pin SOT-23 manufactured by DiodesZetex. The manufacturer part number is DMG3418L-7. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1.5v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5.5 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.4 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 150 mω maximum drain source resistance.
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