Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

Fairchild FQT1N80TF_WS N-channel MOSFET, 200 mA, 800 V QFET, 3+Tab-Pin SOT-223

FQT1N80TF_WS Fairchild  N-channel MOSFET, 200 mA, 800 V QFET, 3+Tab-Pin SOT-223
Fairchild Semiconductor

Product Information

Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.5 nC @ 10 V
Channel Type:
N
Length:
6.7mm
Pin Count:
3 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.1 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
1.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
20 Ω
RoHs Compliant
Checking for live stock

This is Fairchild N-channel MOSFET 200 mA 800 V QFET 3+Tab-Pin SOT-223 manufactured by Fairchild Semiconductor. The manufacturer part number is FQT1N80TF_WS. While 200 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.7mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. It contains 3 + tab pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.1 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 1.7mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 20 ω maximum drain source resistance.

pdf icon
FQT1N80, N-Channel QFET MOSFET 800V 0.2A 20 Ohm Data Sheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search FQT1N80TF_WS on website for other similar products.
We accept all major payment methods for all products including ET13832259. Please check your shopping cart at the time of order.
You can order Fairchild Semiconductor brand products with FQT1N80TF_WS directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Fairchild FQT1N80TF_WS N-channel MOSFET, 200 mA, 800 V QFET, 3+Tab-Pin SOT-223. You can also check on our website or by contacting our customer support team for further order details on Fairchild FQT1N80TF_WS N-channel MOSFET, 200 mA, 800 V QFET, 3+Tab-Pin SOT-223.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13832259 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Fairchild Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13832259.
Yes. We ship FQT1N80TF_WS Internationally to many countries around the world.