Diodes Inc DMT6016LSS-13 N-channel MOSFET, 11.9 A, 60 V, 8-Pin SOIC
Product Information
Maximum Continuous Drain Current:
11.9 A
Transistor Material:
Si
Width:
3.95mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
4.95mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
28 mΩ
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You can order DiodesZetex brand products with DMT6016LSS-13 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Inc DMT6016LSS-13 N-channel MOSFET, 11.9 A, 60 V, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc DMT6016LSS-13 N-channel MOSFET, 11.9 A, 60 V, 8-Pin SOIC.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13825045 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "DiodesZetex" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13825045.
Yes. We ship DMT6016LSS-13 Internationally to many countries around the world.
This is Diodes Inc N-channel MOSFET 11.9 A 60 V 8-Pin SOIC manufactured by DiodesZetex. The manufacturer part number is DMT6016LSS-13. While 11.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.95mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.95mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.1 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 28 mω maximum drain source resistance.
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