Category:
Power MOSFET
Dimensions:
3.1 x 1.7 x 1.1mm
Maximum Continuous Drain Current:
3.7 A, 4 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
1206
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.5 nC @ 10 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
170 pF@ -15 V, 220 pF@ 15 V
Length:
3.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
10 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.1 W, 3.12 W
Maximum Gate Source Voltage:
±20 V
Height:
1.1mm
Typical Turn-On Delay Time:
4 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
100 mΩ, 235 mΩ
This is N/P-channel MOSFET 3.7 A 4 A 30 V 8-Pin 1206 manufactured by Vishay. The manufacturer part number is SI5504BDC-T1-E3. It is of power mosfet category . The given dimensions of the product include 3.1 x 1.7 x 1.1mm. While 3.7 a, 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of 1206. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 4.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 170 pf@ -15 v, 220 pf@ 15 v . Its accurate length is 3.1mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 10 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.1 w, 3.12 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.1mm. In addition, it has a typical 4 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 100 mω, 235 mω maximum drain source resistance.
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