Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
12 nC @ 10 V, 14 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.1 W
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1V
Height:
0.9mm
Width:
1.65mm
Length:
2.95mm
Maximum Drain Source Resistance:
56 mΩ, 168 mΩ
Package Type:
TSOT-26
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.1 A, 5.2 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
This is Diodes Inc Dual N/P-channel MOSFET 2.1 A 5.2 A 20 V 6-Pin TSOT-26 manufactured by DiodesZetex. The manufacturer part number is DMC2038LVT-7. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 12 nc @ 10 v, 14 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.1 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.65mm wide. Its accurate length is 2.95mm. It provides up to 56 mω, 168 mω maximum drain source resistance. The package is a sort of tsot-26. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 2.1 a, 5.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.
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