Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.2 nC @ 10 V, 1.9 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
340 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Minimum Gate Threshold Voltage:
0.6V
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
400 mA, 700 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
1.48 Ω, 578 mΩ
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
This is Dual N/P-channel MOSFET 400 mA 700 mA 20 V 6-Pin SOT-363 manufactured by Vishay. The manufacturer part number is SI1553CDL-T1-GE3. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 1.2 nc @ 10 v, 1.9 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 340 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. Whereas its minimum gate threshold voltage includes 0.6v. The package is a sort of sot-363. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 400 ma, 700 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 1.48 ω, 578 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.
Reviews
Don’t hesitate to ask questions for better clarification.