ON Semiconductor NVMFD5852NLT1G
Product Information
Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
36 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
27 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.4V
Height:
1.05mm
Width:
5.1mm
Length:
6.1mm
Maximum Drain Source Resistance:
12 mΩ
Package Type:
DFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
44 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
NVMFD5852
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 40V 15A 3.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Input Capacitance (Ciss) (Max) @ Vds:
1800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
36nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Drain to Source Voltage (Vdss):
40V
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
6.9mOhm @ 20A, 10V
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
3.2W
Current - Continuous Drain (Id) @ 25°C:
15A
Manufacturer:
ON Semiconductor
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Yes. We ship NVMFD5852NLT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NVMFD5852NLT1G. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 36 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 27 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.4v of maximum gate threshold voltage. In addition, the height is 1.05mm. Furthermore, the product is 5.1mm wide. Its accurate length is 6.1mm. It provides up to 12 mω maximum drain source resistance. The package is a sort of dfn. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 44 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. Base Part Number: nvmfd5852. It features mosfet array 2 n-channel (dual) 40v 15a 3.2w surface mount 8-dfn (5x6) dual flag (so8fl-dual). The product's input capacitance at maximum includes 1800pf @ 25v. The maximum gate charge and given voltages include 36nc @ 10v. The typical Vgs (th) (max) of the product is 2.4v @ 250µa. The product has a 40v drain to source voltage. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 6.9mohm @ 20a, 10v. 8-dfn (5x6) dual flag (so8fl-dual) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 3.2w. The continuous current drain at 25°C is 15a. The on semiconductor's product offers user-desired applications.
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