ON Semiconductor NDF10N60ZG
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
47 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
39 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4.5V
Height:
16.12mm
Width:
4.9mm
Length:
10.63mm
Maximum Drain Source Resistance:
750 mΩ
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NDF10
Detailed Description:
N-Channel 600V 10A (Tc) 39W (Tc) Through Hole TO-220FP
Input Capacitance (Ciss) (Max) @ Vds:
1645pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4.5V @ 100µA
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
68nC @ 10V
Rds On (Max) @ Id, Vgs:
750mOhm @ 5A, 10V
Supplier Device Package:
TO-220FP
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
39W (Tc)
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NDF10N60ZG. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 47 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 39 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4.5v of maximum gate threshold voltage. In addition, the height is 16.12mm. Furthermore, the product is 4.9mm wide. Its accurate length is 10.63mm. It provides up to 750 mω maximum drain source resistance. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ndf10. It features n-channel 600v 10a (tc) 39w (tc) through hole to-220fp. The product's input capacitance at maximum includes 1645pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The typical Vgs (th) (max) of the product is 4.5v @ 100µa. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 68nc @ 10v. It has a maximum Rds On and voltage of 750mohm @ 5a, 10v. to-220fp is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 39w (tc). The continuous current drain at 25°C is 10a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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