ON Semiconductor NTMFS4835NT1G
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
22 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
62.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
1.1mm
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
5 mΩ
Package Type:
SO-8FL
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
104 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
42 Weeks
Detailed Description:
N-Channel 30V 13A (Ta), 130A (Tc) 890mW (Ta), 62.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NTMFS4835
Gate Charge (Qg) (Max) @ Vgs:
52nC @ 11.5V
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 11.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3100pF @ 12V
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 130A (Tc)
Customer Reference:
Power Dissipation (Max):
890mW (Ta), 62.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock
FAQs
Yes. You can also search NTMFS4835NT1G on website for other similar products.
We accept all major payment methods for all products including ET11725805. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with NTMFS4835NT1G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NTMFS4835NT1G. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NTMFS4835NT1G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11725805 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11725805.
Yes. We ship NTMFS4835NT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTMFS4835NT1G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 22 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 62.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 1.1mm. Furthermore, the product is 6.1mm wide. Its accurate length is 5.1mm. It provides up to 5 mω maximum drain source resistance. The package is a sort of so-8fl. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 104 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration. It has typical 42 weeks of manufacturer standard lead time. It features n-channel 30v 13a (ta), 130a (tc) 890mw (ta), 62.5w (tc) surface mount 5-dfn (5x6) (8-sofl). The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn, 5 leads. Base Part Number: ntmfs4835. The maximum gate charge and given voltages include 52nc @ 11.5v. It has a maximum Rds On and voltage of 3.5mohm @ 30a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 11.5v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 3100pf @ 12v. 5-dfn (5x6) (8-sofl) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 13a (ta), 130a (tc). The product carries maximum power dissipation 890mw (ta), 62.5w (tc). This product use mosfet (metal oxide) technology.
Reviews
Don’t hesitate to ask questions for better clarification.