ON Semiconductor ECH8668-TL-H
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
10.8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.9mm
Width:
2.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
48 mΩ, 98 mΩ
Package Type:
ECH
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
5 A, 7.5 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
ECH8668
Detailed Description:
Mosfet Array N and P-Channel 20V 7.5A, 5A 1.5W Surface Mount 8-ECH
Input Capacitance (Ciss) (Max) @ Vds:
1060pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
10.8nC @ 4.5V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
17mOhm @ 4A, 4.5V
Drain to Source Voltage (Vdss):
20V
Package / Case:
8-SMD, Flat Lead
Supplier Device Package:
8-ECH
Manufacturer Standard Lead Time:
7 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1.5W
Current - Continuous Drain (Id) @ 25°C:
7.5A, 5A
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor ECH8668-TL-H. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor ECH8668-TL-H.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11246580 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11246580.
Yes. We ship ECH8668-TL-H Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is ECH8668-TL-H. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 10.8 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.3 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1.3v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 2.3mm wide. Its accurate length is 2.9mm. It provides up to 48 mω, 98 mω maximum drain source resistance. The package is a sort of ech. It consists of 2 elements per chip. While 5 a, 7.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. Base Part Number: ech8668. It features mosfet array n and p-channel 20v 7.5a, 5a 1.5w surface mount 8-ech. The product's input capacitance at maximum includes 1060pf @ 10v. The maximum gate charge and given voltages include 10.8nc @ 4.5v. It has a maximum Rds On and voltage of 17mohm @ 4a, 4.5v. The product has a 20v drain to source voltage. Moreover, the product comes in 8-smd, flat lead. 8-ech is the supplier device package value. It has typical 7 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. It carries FET type n and p-channel. The maximum power of the product is 1.5w. The continuous current drain at 25°C is 7.5a, 5a. The on semiconductor's product offers user-desired applications.
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