ON Semiconductor NTZD3155CT1G
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
0.1 nC @ 4.5 V, 1.5 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
280 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Maximum Gate Threshold Voltage:
1V
Height:
0.6mm
Width:
1.3mm
Length:
1.7mm
Maximum Drain Source Resistance:
2 Ω, 900 mΩ
Package Type:
SOT-563
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
450 mA, 570 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
NTZD3155
Detailed Description:
Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563
Input Capacitance (Ciss) (Max) @ Vds:
150pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain to Source Voltage (Vdss):
20V
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
550mOhm @ 540mA, 4.5V
Supplier Device Package:
SOT-563
Manufacturer Standard Lead Time:
51 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
250mW
Current - Continuous Drain (Id) @ 25°C:
540mA, 430mA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTZD3155CT1G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 0.1 nc @ 4.5 v, 1.5 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 280 mw maximum power dissipation. It features a maximum gate source voltage of -6 v, +6 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.6mm. Furthermore, the product is 1.3mm wide. Its accurate length is 1.7mm. It provides up to 2 ω, 900 mω maximum drain source resistance. The package is a sort of sot-563. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 450 ma, 570 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. Base Part Number: ntzd3155. It features mosfet array n and p-channel 20v 540ma, 430ma 250mw surface mount sot-563. The product's input capacitance at maximum includes 150pf @ 16v. The maximum gate charge and given voltages include 2.5nc @ 4.5v. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has a 20v drain to source voltage. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 550mohm @ 540ma, 4.5v. sot-563 is the supplier device package value. It has typical 51 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 250mw. The continuous current drain at 25°C is 540ma, 430ma. The on semiconductor's product offers user-desired applications.
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