ON Semiconductor NTNUS3171PZT5G
Product Information
Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.4mm
Width:
0.65mm
Length:
0.85mm
Maximum Drain Source Resistance:
3.5 Ω
Package Type:
SOT-1123
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NTNUS3171
Detailed Description:
P-Channel 20V 150mA (Ta) 125mW (Ta) Surface Mount SOT-1123
Input Capacitance (Ciss) (Max) @ Vds:
13pF @ 15V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Rds On (Max) @ Id, Vgs:
3.5Ohm @ 100mA, 4.5V
Supplier Device Package:
SOT-1123
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SOT-1123
Power Dissipation (Max):
125mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
150mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NTNUS3171PZT5G. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NTNUS3171PZT5G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11213002 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11213002.
Yes. We ship NTNUS3171PZT5G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTNUS3171PZT5G. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 125 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.4mm. Furthermore, the product is 0.65mm wide. Its accurate length is 0.85mm. It provides up to 3.5 ω maximum drain source resistance. The package is a sort of sot-1123. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 200 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ntnus3171. It features p-channel 20v 150ma (ta) 125mw (ta) surface mount sot-1123. The product's input capacitance at maximum includes 13pf @ 15v. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The drive voltage (maximum and minimum Rds On) of the product includes 1.2v, 4.5v. It has a maximum Rds On and voltage of 3.5ohm @ 100ma, 4.5v. sot-1123 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in sot-1123. The product carries maximum power dissipation 125mw (ta). The continuous current drain at 25°C is 150ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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