ON Semiconductor NTGS4141NT1G
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
35 mΩ
Package Type:
TSOP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 30V 3.5A (Ta) 500mW (Ta) Surface Mount 6-TSOP
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6
Base Part Number:
NTGS4141
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
Rds On (Max) @ Id, Vgs:
25mOhm @ 7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
560pF @ 24V
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Customer Reference:
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship NTGS4141NT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTGS4141NT1G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 500 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.7mm wide. Its accurate length is 3.1mm. It provides up to 35 mω maximum drain source resistance. The package is a sort of tsop. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration. It has typical 52 weeks of manufacturer standard lead time. It features n-channel 30v 3.5a (ta) 500mw (ta) surface mount 6-tsop. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6. Base Part Number: ntgs4141. The maximum gate charge and given voltages include 12nc @ 10v. It has a maximum Rds On and voltage of 25mohm @ 7a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 560pf @ 24v. 6-tsop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3.5a (ta). The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology.
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