ON Semiconductor NTZD5110NT1G
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
0.7 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
280 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Maximum Gate Threshold Voltage:
2.5V
Height:
0.6mm
Width:
1.3mm
Length:
1.7mm
Maximum Drain Source Resistance:
2.5 Ω
Package Type:
SOT-563
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
310 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
NTZD5110
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 294mA 250mW Surface Mount SOT-563
Input Capacitance (Ciss) (Max) @ Vds:
24.5pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
0.7nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
60V
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 500mA, 10V
Supplier Device Package:
SOT-563
Manufacturer Standard Lead Time:
47 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
250mW
Current - Continuous Drain (Id) @ 25°C:
294mA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTZD5110NT1G. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 0.7 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 280 mw maximum power dissipation. It features a maximum gate source voltage of -6 v, +6 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 0.6mm. Furthermore, the product is 1.3mm wide. Its accurate length is 1.7mm. It provides up to 2.5 ω maximum drain source resistance. The package is a sort of sot-563. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 310 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. Base Part Number: ntzd5110. It features mosfet array 2 n-channel (dual) 60v 294ma 250mw surface mount sot-563. The product's input capacitance at maximum includes 24.5pf @ 20v. The maximum gate charge and given voltages include 0.7nc @ 4.5v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 60v drain to source voltage. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 1.6ohm @ 500ma, 10v. sot-563 is the supplier device package value. It has typical 47 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 250mw. The continuous current drain at 25°C is 294ma. The on semiconductor's product offers user-desired applications.
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