ON Semiconductor NTD18N06LT4G
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
11 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
55 W
Maximum Gate Source Voltage:
-15 V, +15 V
Maximum Gate Threshold Voltage:
2V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
65 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
14 Weeks
Detailed Description:
N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Surface Mount DPAK
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
NTD18
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 5V
Rds On (Max) @ Id, Vgs:
65mOhm @ 9A, 5V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
675pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Drive Voltage (Max Rds On, Min Rds On):
5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
18A (Ta)
Customer Reference:
Power Dissipation (Max):
2.1W (Ta), 55W (Tj)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship NTD18N06LT4G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTD18N06LT4G. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 11 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 55 w maximum power dissipation. It features a maximum gate source voltage of -15 v, +15 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It provides up to 65 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 18 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 14 weeks of manufacturer standard lead time. It features n-channel 60v 18a (ta) 2.1w (ta), 55w (tj) surface mount dpak. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: ntd18. The maximum gate charge and given voltages include 22nc @ 5v. It has a maximum Rds On and voltage of 65mohm @ 9a, 5v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±15v. The product's input capacitance at maximum includes 675pf @ 25v. dpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 18a (ta). The product carries maximum power dissipation 2.1w (ta), 55w (tj). This product use mosfet (metal oxide) technology.
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