ON Semiconductor NVF2955T1G
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
14.3 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
1.65mm
Width:
3.7mm
Length:
6.7mm
Maximum Drain Source Resistance:
185 Ω
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Rds On (Max) @ Id, Vgs:
170 mOhm @ 750mA, 10V
Detailed Description:
P-Channel 60V 2.6A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
Input Capacitance (Ciss) (Max) @ Vds:
492pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 1mA
Series:
Automotive, AEC-Q101
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
14.3nC @ 10V
Supplier Device Package:
SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
P-Channel
Package / Case:
TO-261-4, TO-261AA
Power Dissipation (Max):
1W (Ta)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
2.6A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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Yes. We ship NVF2955T1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NVF2955T1G. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 14.3 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.3 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 1.65mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. It provides up to 185 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 + tab pins. The product offers single transistor configuration. It has a maximum Rds On and voltage of 170 mohm @ 750ma, 10v. It features p-channel 60v 2.6a (ta) 1w (ta) surface mount sot-223 (to-261). The product's input capacitance at maximum includes 492pf @ 25v. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product automotive, aec-q101, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 14.3nc @ 10v. sot-223 (to-261) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in to-261-4, to-261aa. The product carries maximum power dissipation 1w (ta). The product has a 60v drain to source voltage. The continuous current drain at 25°C is 2.6a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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