Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
23mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
SMPD
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
150 nC @ 10 V
Channel Type:
N
Length:
25mm
Pin Count:
9
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Gate Source Voltage:
-20 V, +20 V
Series:
CoolMOS™
Height:
5.5mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
45 mΩ
Rds On (Max) @ Id, Vgs:
45mOhm @ 44A, 10V
Detailed Description:
N-Channel 600V 50A (Tc) Surface Mount ISOPLUS-SMPD™.B
Input Capacitance (Ciss) (Max) @ Vds:
6800pF @ 100V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3.5V @ 3mA
Series:
CoolMOS™
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
190nC @ 10V
Supplier Device Package:
ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tray
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
9-SMD Module
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
IXYS
