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Manufacturer : Vishay
Manufacturer Part No : SISS27DN-T1-GE3
Enrgtech Part No : ET10002941
Product Range : PolySwitch RXEF Series

Vishay SISS27DN-T1-GE3 P-channel MOSFET, 23 A, 30 V TrenchFET, 8-Pin PowerPAK 1212

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor

Product Information

Maximum Continuous Drain Current : 23 A
Transistor Material : Si
Width : 3.3mm
Transistor Configuration : Single
Maximum Drain Source Voltage : 30 V
Package Type : PowerPAK 1212
Number of Elements per Chip : 1
Minimum Gate Threshold Voltage : 1V
Maximum Operating Temperature : +150 °C
rohs : RoHS Certificate of Compliance
Typical Gate Charge @ Vgs : 92 nC @ 10 V
Channel Type : P
Length : 3.3mm
Pin Count : 8
Channel Mode : Enhancement
Mounting Type : Surface Mount
Maximum Power Dissipation : 57 W
Series : TrenchFET
Maximum Gate Source Voltage : -20 V, +20 V
Height : 0.78mm
Minimum Operating Temperature : -55 °C
Maximum Drain Source Resistance : 9 mΩ

Technical Documents

  • Datasheet (Technical Reference)
  • ESD Control Selection Guide V1 (Technical Reference)

Availability:
21000
in stock
Check now

Rate:
  • 3000-12000
    +
    £ 0.213
  • 15000
    +
    £ 0.207

Qty:

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