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Manufacturer : Infineon
Manufacturer Part No : IRFU4105ZPBF
Enrgtech Part No : ET10002599
Product Range : PolySwitch RXEF Series

Infineon IRFU4105ZPBF N-channel MOSFET, 30 A, 55 V HEXFET, 3-Pin IPAK

N-Channel Power MOSFET 55V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Product Information

Maximum Continuous Drain Current : 30 A
Transistor Material : Si
Width : 2.3mm
Transistor Configuration : Single
Maximum Drain Source Voltage : 55 V
Maximum Gate Threshold Voltage : 4V
Package Type : IPAK (TO-251)
Number of Elements per Chip : 1
Minimum Gate Threshold Voltage : 2V
Maximum Operating Temperature : +175 °C
rohs : RoHS Certificate of Compliance
Typical Gate Charge @ Vgs : 18 nC @ 10 V
Channel Type : N
Length : 6.6mm
Pin Count : 3
Channel Mode : Enhancement
Mounting Type : Through Hole
Maximum Power Dissipation : 48 W
Series : HEXFET
Maximum Gate Source Voltage : -20 V, +20 V
Height : 6.1mm
Minimum Operating Temperature : -55 °C
Maximum Drain Source Resistance : 25 mΩ

Technical Documents

  • MOSFET N-ch HEXFET 55V 30A IPAK (Technical Reference)
  • ESD Control Selection Guide V1 (Technical Reference)

Availability:
70
in stock
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    £ 0.806
  • 25-45
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    £ 0.671
  • 50-95
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    £ 0.595

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