| Manufacturer : | Infineon |
| Manufacturer Part No : | IRFU4105ZPBF |
| Enrgtech Part No : | ET10002599 |
| Product Range : | PolySwitch RXEF Series |
Infineon IRFU4105ZPBF N-channel MOSFET, 30 A, 55 V HEXFET, 3-Pin IPAK
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Product Information
| Maximum Continuous Drain Current | : | 30 A |
| Transistor Material | : | Si |
| Width | : | 2.3mm |
| Transistor Configuration | : | Single |
| Maximum Drain Source Voltage | : | 55 V |
| Maximum Gate Threshold Voltage | : | 4V |
| Package Type | : | IPAK (TO-251) |
| Number of Elements per Chip | : | 1 |
| Minimum Gate Threshold Voltage | : | 2V |
| Maximum Operating Temperature | : | +175 °C |
| rohs | : | RoHS Certificate of Compliance |
| Typical Gate Charge @ Vgs | : | 18 nC @ 10 V |
| Channel Type | : | N |
| Length | : | 6.6mm |
| Pin Count | : | 3 |
| Channel Mode | : | Enhancement |
| Mounting Type | : | Through Hole |
| Maximum Power Dissipation | : | 48 W |
| Series | : | HEXFET |
| Maximum Gate Source Voltage | : | -20 V, +20 V |
| Height | : | 6.1mm |
| Minimum Operating Temperature | : | -55 °C |
| Maximum Drain Source Resistance | : | 25 mΩ |
Technical Documents
- MOSFET N-ch HEXFET 55V 30A IPAK (Technical Reference)
- ESD Control Selection Guide V1 (Technical Reference)
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