Infineon F3L150R07W2H3B11BPSA1 IGBT Module, 85 A 650 V

F3L150R07W2H3B11BPSA1 Infineon  IGBT Module, 85 A 650 V
Infineon

Product Information

Maximum Power Dissipation:
20 mW
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
4
Maximum Continuous Collector Current:
85 A
Maximum Gate Emitter Voltage:
±20V
RoHs Compliant
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This is IGBT Module 85 A 650 V manufactured by Infineon. The manufacturer part number is F3L150R07W2H3B11BPSA1. Provides up to 20 mw maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 4 transistors . The product has a maximum 85 a continuous collector current . It offers a maximum ±20v gate emitter voltage .

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Datasheet - F3L150R07W2H3B11BPSA1(Technical Reference)

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