Infineon DF200R07W2H3B77BPSA1 IGBT Module, 40 A, 70 A 650 V
Product Information
Maximum Power Dissipation:
20 mW
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
4
Maximum Continuous Collector Current:
40 A, 70 A
Maximum Gate Emitter Voltage:
±20V
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Yes. Our products in IGBTs category are shipped in lowest possible time.
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Yes. We ship DF200R07W2H3B77BPSA1 Internationally to many countries around the world.
This is IGBT Module 40 A 70 A 650 V manufactured by Infineon. The manufacturer part number is DF200R07W2H3B77BPSA1. Provides up to 20 mw maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 4 transistors . The product has a maximum 40 a, 70 a continuous collector current . It offers a maximum ±20v gate emitter voltage .
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