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Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V

FP50R12KE3BOSA1 Infineon IGBT Module, 75 A 1200 V
Infineon

Product Information

Maximum Power Dissipation:
280 W
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
7
Maximum Continuous Collector Current:
75 A
Maximum Gate Emitter Voltage:
±20V
RoHs Compliant
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This is IGBT Module 75 A 1200 V manufactured by Infineon. The manufacturer part number is FP50R12KE3BOSA1. Provides up to 280 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 7 transistors . The product has a maximum 75 a continuous collector current . It offers a maximum ±20v gate emitter voltage .

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Datasheet - FP50R12KE3BOSA1(Technical Reference)

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FAQs

Yes. You can also search FP50R12KE3BOSA1 on website for other similar products.
We accept all major payment methods for all products including ET24129383. Please check your shopping cart at the time of order.
You can order Infineon brand products with FP50R12KE3BOSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V. You can also check on our website or by contacting our customer support team for further order details on Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET24129383 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET24129383.
Yes. We ship FP50R12KE3BOSA1 Internationally to many countries around the world.
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