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Infineon FP15R12W1T4BOMA1 IGBT Module, 28 A 1200 V

FP15R12W1T4BOMA1 Infineon IGBT Module, 28 A 1200 V
FP15R12W1T4BOMA1 Infineon IGBT Module, 28 A 1200 V
Infineon

Product Information

Maximum Continuous Collector Current:
28 A
Maximum Gate Emitter Voltage:
+/-20V
Number of Transistors:
7
Maximum Collector Emitter Voltage:
1200 V
Maximum Power Dissipation:
130 W
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This is IGBT Module 28 A 1200 V manufactured by Infineon. The manufacturer part number is FP15R12W1T4BOMA1. The product has a maximum 28 a continuous collector current . It offers a maximum +/-20v gate emitter voltage . It has 7 transistors . Whereas features a 1200 v of collector emitter voltage (max). Provides up to 130 w maximum power dissipation.

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Datasheet - FP15R12W1T4BOMA1(Technical Reference)

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You can order Infineon brand products with FP15R12W1T4BOMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon FP15R12W1T4BOMA1 IGBT Module, 28 A 1200 V. You can also check on our website or by contacting our customer support team for further order details on Infineon FP15R12W1T4BOMA1 IGBT Module, 28 A 1200 V.
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