Name: FP100R12KT4BOSA1, Infineon
Brand: Infineon
SKU: ET24129371
Price: 130.10 GBP
Availability: PreOrder

FP100R12KT4BOSA1 Infineon IGBT Module, 100 A 1200 V

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Product Information

Maximum Continuous Collector Current:

100 A

Maximum Gate Emitter Voltage:

+/-20V

Number of Transistors:

Maximum Collector Emitter Voltage:

1200 V

Maximum Power Dissipation:

515 W

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This is IGBT Module 100 A 1200 V manufactured by Infineon. The manufacturer part number is FP100R12KT4BOSA1. The product has a maximum 100 a continuous collector current . It offers a maximum +/-20v gate emitter voltage . It has 7 transistors . Whereas features a 1200 v of collector emitter voltage (max). Provides up to 515 w maximum power dissipation.

Datasheet - FP100R12KT4BOSA1(Technical Reference)

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You can order Infineon brand products with FP100R12KT4BOSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

Yes. Our products in IGBTs category are shipped in lowest possible time.

You will get a confirmation email regarding your order of Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V. You can also check on our website or by contacting our customer support team for further order details on Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V.

Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

FP100R12KT4BOSA1

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