Infineon F475R06W1E3BOMA1 Emitter-Collector, Quad (2 x Dual) IGBT Module, 100 A 600 V
Product Information
Maximum Power Dissipation:
275 W
Maximum Collector Emitter Voltage:
600 V
Number of Transistors:
4
Maximum Continuous Collector Current:
100 A
Maximum Gate Emitter Voltage:
+/-20V
Configuration:
Emitter-Collector, Quad (2 x Dual)
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This is Emitter-Collector Quad (2 x Dual) IGBT Module 100 A 600 V manufactured by Infineon. The manufacturer part number is F475R06W1E3BOMA1. Provides up to 275 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). It has 4 transistors . The product has a maximum 100 a continuous collector current . It offers a maximum +/-20v gate emitter voltage . The product is available in emitter-collector, quad (2 x dual) configuration.
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