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Infineon IKD15N60RFATMA1 Single IGBT, 30 A 600 V, 3-Pin PG-TO252

IKD15N60RFATMA1 Infineon  Single IGBT, 30 A 600 V, 3-Pin PG-TO252
Infineon

Product Information

Maximum Power Dissipation:
250 W
Maximum Collector Emitter Voltage:
600 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
30 A
Maximum Gate Emitter Voltage:
20V
Package Type:
PG-TO252
Configuration:
Single
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Single IGBT 30 A 600 V 3-Pin PG-TO252 manufactured by Infineon. The manufacturer part number is IKD15N60RFATMA1. Provides up to 250 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 30 a continuous collector current . It offers a maximum 20v gate emitter voltage . The package is a sort of pg-to252. The product is available in single configuration. It contains 3 pins. The product offers single transistor configuration.

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Datasheet - IKD15N60RFATMA1(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IKD15N60RFATMA1 Single IGBT, 30 A 600 V, 3-Pin PG-TO252. You can also check on our website or by contacting our customer support team for further order details on Infineon IKD15N60RFATMA1 Single IGBT, 30 A 600 V, 3-Pin PG-TO252.
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