Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263
Product Information
Maximum Power Dissipation:
270 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
30V
Package Type:
PG-TO263
Configuration:
Single
Pin Count:
3
Transistor Configuration:
Single
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This is Single IGBT 80 A 650 V 3-Pin PG-TO263 manufactured by Infineon. The manufacturer part number is IGB50N65S5ATMA1. Provides up to 270 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum 30v gate emitter voltage . The package is a sort of pg-to263. The product is available in single configuration. It contains 3 pins. The product offers single transistor configuration.
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