Infineon FF600R12KT4HOSA1 Dual IGBT Module, 600 A 1200 V AG-62MM
Product Information
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
2
Channel Type:
N
Maximum Continuous Collector Current:
600 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
AG-62MM
Configuration:
Dual
Transistor Configuration:
Series
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Yes. Our products in IGBTs category are shipped in lowest possible time.
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Yes. We ship FF600R12KT4HOSA1 Internationally to many countries around the world.
This is Dual IGBT Module 600 A 1200 V AG-62MM manufactured by Infineon. The manufacturer part number is FF600R12KT4HOSA1. Whereas features a 1200 v of collector emitter voltage (max). It has 2 transistors . The product is available in [Cannel Type] channel. The product has a maximum 600 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of ag-62mm. The product is available in dual configuration. The product offers series transistor configuration.
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