Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM
Product Information
Maximum Power Dissipation:
1.2 kW
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
600 A
Maximum Gate Emitter Voltage:
20V
Package Type:
AG-62MM
Configuration:
Dual
Transistor Configuration:
Common Emitter
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Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM. You can also check on our website or by contacting our customer support team for further order details on Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM.
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Yes. We ship FF600R12KE4BOSA1 Internationally to many countries around the world.
This is Dual IGBT 600 A 1200 V AG-62MM manufactured by Infineon. The manufacturer part number is FF600R12KE4BOSA1. Provides up to 1.2 kw maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 600 a continuous collector current . It offers a maximum 20v gate emitter voltage . The package is a sort of ag-62mm. The product is available in dual configuration. The product offers common emitter transistor configuration.
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