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onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount

HGT1S10N120BNST onsemi  IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount
HGT1S10N120BNST
onsemi

Product Information

Dimensions:
10.67 x 11.33 x 4.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
298 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
35 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
320µJ (on), 800µJ (off)
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Td (on/off) @ 25°C:
23ns/165ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge:
100 nC
REACH Status:
REACH Unaffected
Test Condition:
960V, 10A, 10Ohm, 15V
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
NPT
Current - Collector Pulsed (Icm):
80 A
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Power - Max:
298 W
Base Product Number:
HGT1S10
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is IGBT 80 A 1200 V 3-Pin D2PAK (TO-263) Surface Mount manufactured by onsemi. The manufacturer part number is HGT1S10N120BNST. The given dimensions of the product include 10.67 x 11.33 x 4.83mm. The product is available in surface mount configuration. Provides up to 298 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of d2pak (to-263). Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 35 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 320µj (on), 800µj (off). Features 2.7v @ 15v, 10a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 23ns/165ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. Features 100 nc gate charge. In addition, it is reach unaffected. Test condition included 960v, 10a, 10ohm, 15v. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-263 (d2pak) is the supplier device package value. The maximum power of the product is 298 w. Moreover, it corresponds to hgt1s10, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Assembly Change 09/May/2023(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult DEV EOL 22/Dec/2023(PCN Obsolescence/ EOL)
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HGT(G,P)10N120BN, HGT1S10N120BNS(Datasheets)
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Mult Dev Box Chgs 1/Jul/2021(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)

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You will get a confirmation email regarding your order of onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount. You can also check on our website or by contacting our customer support team for further order details on onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount.
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