onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

FGH60N60SMD onsemi  IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole
FGH60N60SMD
onsemi

Product Information

Dimensions:
15.6 x 4.7 x 20.6mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
600 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
120 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247AB
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
120 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
1.26mJ (on), 450µJ (off)
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 60A
Voltage - Collector Emitter Breakdown (Max):
600 V
Td (on/off) @ 25°C:
18ns/104ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
189 nC
Reverse Recovery Time (trr):
39 ns
REACH Status:
REACH Unaffected
Test Condition:
400V, 60A, 3Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
23 Weeks
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
180 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Power - Max:
600 W
Base Product Number:
FGH60
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is IGBT 120 A 600 V 3-Pin TO-247AB Through Hole manufactured by onsemi. The manufacturer part number is FGH60N60SMD. The given dimensions of the product include 15.6 x 4.7 x 20.6mm. The product is available in through hole configuration. Provides up to 600 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 120 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247ab. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 120 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 1.26mj (on), 450µj (off). Features 2.5v @ 15v, 60a. The maximum collector emitter breakdown voltage of the product is 600 v. Td (on/off) value of 18ns/104ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 189 nc gate charge. It has a trr (reverse recovery time) of 39 ns. In addition, it is reach unaffected. Test condition included 400v, 60a, 3ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 23 weeks standard lead time. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. The maximum power of the product is 600 w. Moreover, it corresponds to fgh60, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Wafer Fab Change 27/Dec/2022(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FGH60N60SMD(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Packing quantity increase 28/Dec/2020(PCN Packaging)

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FAQs

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