Renesas Electronics RJP65T43DPM-00#T1 IGBT, 40 A 650 V, 3+Tab-Pin TO-3PFM

RJP65T43DPM-00-T1 Renesas Electronics RJP65T43DPM-00#T1 IGBT, 40 A 650 V, 3+Tab-Pin TO-3PFM
Renesas Electronics

Product Information

Maximum Continuous Collector Current:
40 A
Dimensions:
15.6 x 5.5 x 19.9mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
68.8 W
Maximum Operating Temperature:
+175 °C
Maximum Collector Emitter Voltage:
650 V
Height:
19.9mm
Width:
5.5mm
Length:
15.6mm
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-3PFM
Channel Type:
N
Gate Capacitance:
1550pF
Pin Count:
3+Tab
Transistor Configuration:
Single
RoHs Compliant
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This is IGBT 40 A 650 V 3+Tab-Pin TO-3PFM manufactured by Renesas Electronics. The manufacturer part number is RJP65T43DPM-00#T1. The product has a maximum 40 a continuous collector current . The given dimensions of the product include 15.6 x 5.5 x 19.9mm. The product is available in through hole configuration. Provides up to 68.8 w maximum power dissipation. It has a maximum operating temperature of +175 °c. Whereas features a 650 v of collector emitter voltage (max). In addition, the height is 19.9mm. Furthermore, the product is 5.5mm wide. Its accurate length is 15.6mm. It offers a maximum ±30v gate emitter voltage . The package is a sort of to-3pfm. The product is available in [Cannel Type] channel. It has approximately 1550pf gate capacitance . It contains 3+tab pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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