This is IGBT 50 A 1200 V 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IHW25N120R2FKSA1. The given dimensions of the product include 16.13 x 5.21 x 21.1mm. The product is available in through hole configuration. Provides up to 365 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -40 °c. It has about 60khz switching speed . It has approximately 2342pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 2.54mj energy rating . The product offers single transistor configuration.
IHW25N120R2, Reverse Conducting IGBT with Monolithic Body Diode(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is IGBT 50 A 1200 V 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IHW25N120R2FKSA1. The given dimensions of the product include 16.13 x 5.21 x 21.1mm. The product is available in through hole configuration. Provides up to 365 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -40 °c. It has about 60khz switching speed . It has approximately 2342pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 2.54mj energy rating . The product offers single transistor configuration.
Reviews
Don’t hesitate to ask questions for better clarification.