Infineon IKW30N65ES5XKSA1 IGBT, 62 A 650 V, 3-Pin TO-247
Product Information
Dimensions:
16.13 x 5.21 x 21.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
188 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
62 A
Maximum Gate Emitter Voltage:
±20 V, ±30V
Package Type:
TO-247
Minimum Operating Temperature:
-40 °C
Switching Speed:
30kHz
Gate Capacitance:
1800pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
0.88mJ
Transistor Configuration:
Single
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This is IGBT 62 A 650 V 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IKW30N65ES5XKSA1. The given dimensions of the product include 16.13 x 5.21 x 21.1mm. The product is available in through hole configuration. Provides up to 188 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 62 a continuous collector current . It offers a maximum ±20 v, ±30v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -40 °c. It has about 30khz switching speed . It has approximately 1800pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 0.88mj energy rating . The product offers single transistor configuration.
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