Infineon IKW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247

Enrgtech Part No: ET16793009
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Manufacturer Part No:
IKW30N60H3FKSA1
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Manufacturer: Infineon

IKW30N60H3FKSA1 Infineon IGBT, 60 A 600 V, 3-Pin TO-247

Product Information

Dimensions:

16.13 x 5.21 x 21.1mm

Mounting Type:

Through Hole

Maximum Power Dissipation:

187 W

Maximum Collector Emitter Voltage:

600 V

Channel Type:

Maximum Continuous Collector Current:

60 A

Maximum Gate Emitter Voltage:

±20V

Package Type:

TO-247

Minimum Operating Temperature:

-40 °C

Gate Capacitance:

1630pF

Maximum Operating Temperature:

+175 °C

Pin Count:

Checking for live stock

The Infineon IKW30N60H3FKSA1 is a high-performance IGBT transistor tailored for UK OEMs, industrial system integrators, and power electronics developers. Offering a robust 600 V rating and 60 A continuous collector current, this device delivers efficient switching with minimal conduction losses. Packaged in a TO‑247‑3 through‑hole format, it supports high power dissipation (up to 187 W) and withstands harsh temperature conditions (–40 °C to +175 °C). It is optimised for reliable performance in motor drives, renewable energy systems, and power converters across UK industrial environments.

Key Reasons to Buy the Infineon IGBT, 60 A 600 V, 3-Pin TO-247

Designed for demanding applications, this IGBT combines MOSFET‑like gate control with bipolar current capability, resulting in ultra‑efficient switching and low EMI. Its TrenchStop 3 topology and fast recovery diode reduce turn-off losses, making it perfect for high-frequency and hard-switching circuits. Supporting operation at elevated junction temperatures (up to 175 °C) and robust current handling, it ensures long-term reliability and reduces maintenance needs.

Core Features and Benefits of the Product

High voltage capacity: 600 V collector-emitter breakdown rating.
Strong current support: 60 A continuous, up to 120 A pulsed.
Efficient power handling: 187 W maximum dissipation.
Fast switching: 21 ns turn‑on, 207 ns turn‑off delay.
Integrated fast-recovery antiparallel diode for improved circuit resilience.
Wide operating temperature from –40 °C to +175 °C for harsh environments.

Typical Uses

Power inverters and motor drives for industrial automation
Renewable energy systems: solar inverters, wind turbines
UPS and uninterruptible power supply systems
Welding machines and induction heating
General-purpose frequency converters and SMPS
Hard-switching and resonant topologies operating below ~70 kHz

IKW30N60H3 IGBT w soft fast-recovery Diode(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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