Infineon IKQ40N120CH3XKSA1 P-channel IGBT, 80 A 1200 V, 3-Pin TO-247

Infineon

Product Information

Maximum Power Dissipation:
500 W
Maximum Collector Emitter Voltage:
1200 V
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
PG-TO247-3-46
Configuration:
Single
RoHs Compliant
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The Infineon IKQ40N120CH3XKSA1 is a high-voltage, high-current switching powerhouse engineered for demanding UK-based applications. Delivering up to 1,200 V collector-emitter voltage and 80 A continuous current, this P‑channel device in a robust TO‑247‑3 package ensures exceptional thermal and electrical performance. With a 500 W power dissipation capability, ±20 V gate tolerance, and rugged construction, it’s designed for reliability in industrial, renewable energy, and motor control systems across the UK.

Why Choose the Infineon P-channel IGBT, 3-Pin TO-247?

The IKQ40N120CH3XKSA1 stands out for its combination of high voltage tolerance, substantial current handling, and thermal resilience, all packaged in a proven TO‑247‑3 design. Its integrated anti-parallel diode simplifies system integration, while Infineon’s H3 technology ensures fast switching and reliable performance even under hard‑switch conditions. UK engineers appreciate its ease of paralleling and robust specs that support long-term operation with reduced maintenance.

Notable Advantages to Users

  • High voltage & current capacity
  • Impressive power dissipation
  • Integrated anti‑parallel diode
  • Fast switching performance
  • ±20 V gate tolerance

Product Use Cases

  • Industrial motor drives and inverters
  • Renewable energy systems (solar/wind control electronics)
  • High-voltage power supplies and converters
  • Welding equipment and industrial heating controllers
  • Heavy-duty UPS and power management units

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Datasheet - IKQ40N120CH3XKSA1(Technical Reference)

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