Name: IKP06N60TXKSA1, Infineon
Brand: Infineon
SKU: ET16792988
Price: 0.95 GBP
Availability: InStock

IKP06N60TXKSA1 Infineon IGBT, 6 A 600 V, 3-Pin TO-220

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Product Information

Dimensions:

10.36 x 4.57 x 15.95mm

Mounting Type:

Through Hole

Maximum Power Dissipation:

88 W

Maximum Collector Emitter Voltage:

600 V

Channel Type:

Maximum Continuous Collector Current:

6 A

Maximum Gate Emitter Voltage:

±20V

Package Type:

TO-220

Minimum Operating Temperature:

-40 °C

Gate Capacitance:

368pF

Maximum Operating Temperature:

+175 °C

Pin Count:

Checking for live stock

Infineon TrenchStop IGBT Transistors, 600 and 650V A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C IGBT Discretes & Modules, Infineon The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

IKP06N60T IGBT w soft fast recovery HE diode(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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Yes. Our products in IGBTs category are shipped in lowest possible time.

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Infineon IKP06N60TXKSA1 IGBT, 6 A 600 V, 3-Pin TO-220

IKP06N60TXKSA1

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