Infineon IKB06N60TATMA1 IGBT, 12 A 600 V, 3-Pin D2PAK (TO-263)

IKB06N60TATMA1 Infineon  IGBT, 12 A 600 V, 3-Pin D2PAK (TO-263)
Infineon

Product Information

Mounting Type:
Through Hole
Maximum Power Dissipation:
88 W
Maximum Collector Emitter Voltage:
600 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
1899-12-31 06:00:00
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-263
Pin Count:
3
RoHs Compliant
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This is IGBT 12 A 600 V 3-Pin D2PAK (TO-263) manufactured by Infineon. The manufacturer part number is IKB06N60TATMA1. The product is available in through hole configuration. Provides up to 88 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 1899-12-31 06:00:00 continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-263. It contains 3 pins.

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Datasheet - IKB06N60TATMA1(Technical Reference)

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