Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263)

IGB10N60TATMA1 Infineon  IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263)
IGB10N60TATMA1
Infineon

Product Information

Dimensions:
10.31 x 9.45 x 4.57mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
110 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
10 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Minimum Operating Temperature:
-40 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Checking for live stock

This is IGBT 10 A 600 V 3-Pin D2PAK (TO-263) manufactured by Infineon. The manufacturer part number is IGB10N60TATMA1. The given dimensions of the product include 10.31 x 9.45 x 4.57mm. The product is available in surface mount configuration. Provides up to 110 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 10 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of d2pak (to-263). Whereas, the minimum operating temperature of the product is -40 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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IGB10N60T, Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop Technology(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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