Dimensions:
10.36 x 4.9 x 16.07mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
42 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
20 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-220F
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
20A
Detailed Description:
IGBT NPT 600V 20A 42W Through Hole TO-220F-3
Vce(on) (Max) @ Vge, Ic:
2.45V @ 15V, 10A
Td (on/off) @ 25°C:
8ns/52.2ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-220-3 Full Pack
Gate Charge:
37nC
Base Part Number:
FGPF10
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
37.7ns
Switching Energy:
150µJ (on), 50µJ (off)
Test Condition:
400V, 10A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
NPT
Current - Collector Pulsed (Icm):
30A
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F-3
Packaging:
Tube
Power - Max:
42W
Customer Reference:
This is manufactured by ON Semiconductor. The manufacturer part number is FGPF10N60UNDF. The given dimensions of the product include 10.36 x 4.9 x 16.07mm. The product is available in through hole configuration. Provides up to 42 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 20 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-220f. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 20a. It features igbt npt 600v 20a 42w through hole to-220f-3. Features 2.45v @ 15v, 10a. Td (on/off) value of 8ns/52.2ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-220-3 full pack. Features 37nc gate charge. Base Part Number: fgpf10. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 37.7ns. Provide switching energy up to 150µj (on), 50µj (off). Test condition included 400v, 10a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-220f-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 42w.
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