This is manufactured by ON Semiconductor. The manufacturer part number is FGH75T65SQDTL4. Features 128nc gate charge. Base Part Number: fgh75. It features igbt trench field stop 650v 150a through hole to-247. It has a trr (reverse recovery time) of 76ns. The product is available in through hole configuration. The maximum collector current includes 150a. Features 2.1v @ 15v, 75a. The product has -55°c ~ 175°c (tj) operating temperature range. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 307µj (on), 266µj (off). Td (on/off) value of 44ns/276ns. It carries standard input type. Moreover, the product comes in to-247-4. The maximum collector emitter breakdown voltage of the product is 650v. Features an IGBT trench field stop type. Test condition included 400v, 18.8a, 15ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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This is manufactured by ON Semiconductor. The manufacturer part number is FGH75T65SQDTL4. Features 128nc gate charge. Base Part Number: fgh75. It features igbt trench field stop 650v 150a through hole to-247. It has a trr (reverse recovery time) of 76ns. The product is available in through hole configuration. The maximum collector current includes 150a. Features 2.1v @ 15v, 75a. The product has -55°c ~ 175°c (tj) operating temperature range. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 307µj (on), 266µj (off). Td (on/off) value of 44ns/276ns. It carries standard input type. Moreover, the product comes in to-247-4. The maximum collector emitter breakdown voltage of the product is 650v. Features an IGBT trench field stop type. Test condition included 400v, 18.8a, 15ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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